收藏本站
NP82N06PDG
PACKAGE DRAWING (Unit: mm)
TO-263 (MP-25ZP)
No plating
10.0 ±0.3
7.88 MIN.
4.45 ±0.2
1.3 ±0.2
4
0.025
0.5
0.6 ±0
.2
to 0.25
0.75 ±0.2
2.54
0 to 8
?
0.25
1 2
3
1. Gate
2. Drain
3. Source
4. Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Body
Gate
Diode
Source
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
6
Data Sheet D18227EJ1V0DS
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
NP83P04PDG-E1-AY MOSFET P-CH -40V 83A TO-263
NP83P06PDG-E1-AY MOSFET P-CH -60V 83A TO-263
NP84N075MUE-S18-AY MOSFET N-CH 75V 84A TO-220
NP88N03KDG-E1-AY MOSFET N-CH 30V 88A TO-263
NP88N03KUG-E1-AY MOSFET N-CH 30V 88A TO-263
NP88N04KUG-E1-AZ MOSFET N-CH 40V 88A TO-263
NP88N04NUG-S18-AY MOSFET N-CH 40V 88A TO-262
NP88N055KUG-E1-AY MOSFET N-CH 55V 88A TO-263
相关代理商/技术参数
NP82N06PDG-E2-AY 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:SWITCHING N-CHANNEL POWER MOS FET
NP82N06PLG 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET
NP82N06PLG-E1-AY 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET
NP82N06PLG-E2-AY 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET
NP82N10PUF 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR
NP82N10PUF-E1-AY 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR
NP82N10PUF-E2-AY 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR
NP82OR 制造商:Hubbell Wiring Device-Kellems 功能描述:WALLPLATE, 2-G DUPLEX NYL ORANGE